NTHD2102PT1G
MOSFET 2P-CH 8V 3.4A CHIPFETManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTHD2102PT1G is a dual P-channel MOSFET array designed for efficient power management. Featuring an 8V drain-to-source breakdown voltage and capable of handling 3.4A continuous drain current at 25°C, this component is suitable for applications requiring compact and high-performance switching. Its low Rds(on) of 58mOhm at 3.4A and 4.5V Vgs, combined with a logic level gate, ensures optimal performance with lower gate drive voltages. The device is supplied in a ChipFET™ package, facilitating surface mounting for space-constrained designs. With a maximum power dissipation of 1.1W and an operating temperature range of -55°C to 150°C, the NTHD2102PT1G finds utility in automotive, industrial, and consumer electronics where reliable power control is essential. Key parameters include a gate charge of 16nC and input capacitance of 715pF.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 715pF @ 6.4V |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 3.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 2.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | ChipFET™ |
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