NTHD2102PT1
MOSFET 2P-CH 8V 3.4A CHIPFETManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTHD2102PT1 is a dual P-channel MOSFET array designed for efficient power management. This ChipFET™ device operates at 8V with a continuous drain current of 3.4A per channel at 25°C, dissipating up to 1.1W. Featuring a logic-level gate, it offers a low Rds(On) of 58mOhm at 3.4A and 4.5V Vgs, with a Vgs(th) of 1.5V at 250µA. Its low gate charge of 16nC at 2.5V and input capacitance of 715pF at 6.4V contribute to high switching speeds. Packaged in an 8-SMD, Flat Leads configuration and supplied on tape and reel, this MOSFET array is suitable for surface mounting in applications across automotive, industrial, and consumer electronics sectors requiring compact and efficient switching solutions. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 715pF @ 6.4V |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 3.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 2.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | ChipFET™ |
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