NTHC5513T1G
MOSFET N/P-CH 20V 2.9A CHIPFETManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTHC5513T1G is a MOSFET array featuring N-channel and P-channel transistors within a single ChipFET™ package. This component offers a 20V drain-to-source voltage (Vdss) and supports continuous drain currents of 2.9A for the N-channel and 2.2A for the P-channel at 25°C. Optimized for power efficiency, it exhibits a low on-resistance of 80mOhm maximum at 2.9A and 4.5V Vgs. The device incorporates a logic level gate feature, simplifying drive requirements. With a maximum power dissipation of 1.1W and a wide operating temperature range of -55°C to 150°C, the NTHC5513T1G is suitable for applications in consumer electronics and industrial systems requiring efficient switching and power management. The input capacitance (Ciss) is 180pF maximum at 10V Vds, and gate charge (Qg) is 4nC maximum at 4.5V Vgs. This component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A, 2.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 10V |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 2.9A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | ChipFET™ |
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