NTHC5513T1
MOSFET N/P-CH 20V 2.9A CHIPFETManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTHC5513T1 is a MOSFET array featuring complementary N-channel and P-channel devices in a ChipFET™ package. This component offers a continuous drain current of 2.9A for the N-channel and 2.2A for the P-channel at 25°C, with a maximum drain-to-source voltage of 20V. The logic level gate feature supports lower gate drive voltages. Key parameters include a maximum Rds(On) of 80mOhm at 2.9A and 4.5V, a gate charge of 4nC at 4.5V, and input capacitance of 180pF at 10V. With a maximum power dissipation of 1.1W, it operates across a temperature range of -55°C to 150°C. The NTHC5513T1 is suitable for applications in consumer electronics and industrial control systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A, 2.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 10V |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 2.9A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | ChipFET™ |
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