NTGD4161PT1G
MOSFET 2P-CH 30V 1.5A 6TSOPManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi NTGD4161PT1G, a 2 P-Channel MOSFET array, offers a 30V drain-source breakdown voltage and a continuous drain current capability of 1.5A at 25°C. This device features a logic-level gate for enhanced control and a maximum on-resistance of 160mOhm at 2.1A and 10V Vgs. With a gate charge of 7.1nC (max) at 10V and input capacitance of 281pF (max) at 15V, it is suitable for high-frequency applications. The NTGD4161PT1G is housed in a 6-TSOP package, designed for surface mounting. Its maximum power dissipation is 600mW, and it operates across a temperature range of -55°C to 150°C. This component finds application in power management and switching circuits within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 600mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 281pF @ 15V |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 2.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7.1nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 6-TSOP |
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