NTGD3149CT1G
MOSFET N/P-CH 20V 3.2A 6TSOPManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTGD3149CT1G is a MOSFET array featuring N and P-channel configurations, designed for efficient switching applications. This component offers a Drain to Source Voltage (Vdss) of 20V, with continuous drain currents of 3.2A for the N-channel and 2.4A for the P-channel. The device boasts a low Rds On of 60mOhm at 3.5A and 4.5V Vgs, and a logic level gate for enhanced drive flexibility. With a maximum power dissipation of 900mW and a gate charge of 5.5nC (Max) @ 4.5V, it is suitable for compact designs. The NTGD3149CT1G is provided in a 6-TSOP package, tape and reel, making it ideal for automated surface mount assembly. Its operational temperature range is -55°C to 150°C. This device finds application in various industries including automotive, industrial, and consumer electronics, particularly in power management and signal switching circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A, 2.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 387pF @ 10V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 3.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-TSOP |