NTGD3133PT1G
MOSFET 2P-CH 20V 1.6A 6TSOPManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NTGD3133PT1G is a 2 P-channel MOSFET array designed for advanced power management applications. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 1.6A at 25°C. The low Rds On of 145mOhm at 2.2A and 4.5V, coupled with a Logic Level Gate, ensures efficient switching and reduced power loss. With a Gate Charge (Qg) of 5.5nC at 4.5V and Input Capacitance (Ciss) of 400pF at 10V, it is suitable for high-frequency operations. The NTGD3133PT1G is housed in a compact 6-TSOP (SOT-23-6 Thin) package, facilitating efficient board space utilization. Its robust operating temperature range of -55°C to 150°C makes it reliable for demanding environments. This component is commonly used in consumer electronics, industrial automation, and automotive systems requiring precise voltage and current control. The part is supplied in a Tape & Reel package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 560mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 10V |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 2.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | 6-TSOP |
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