NDS9959
MOSFET 2N-CH 50V 2A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi NDS9959 is a dual N-channel MOSFET array designed for surface mount applications. This component features a Drain-Source Voltage (Vdss) of 50V and a continuous Drain Current (Id) of 2A at 25°C. The Rds On is specified at a maximum of 300mOhm when Id is 1.5A and Vgs is 10V. Key electrical characteristics include a Gate Charge (Qg) of 15nC (max) and an input capacitance (Ciss) of 250pF (max). The device is packaged in an 8-SOIC format and operates within a temperature range of -55°C to 150°C. The maximum power dissipation is 900mW. This MOSFET array is utilized in power management and control circuits across various industries including automotive and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25°C | 2A |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 25V |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 1.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SOIC |
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