NDS9958
MOSFET N/P-CH 20V 3.5A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NDS9958 is a MOSFET array featuring both N-channel and P-channel configurations, designed for high-efficiency switching applications. This component offers a drain-source voltage (Vdss) of 20V and supports a continuous drain current (Id) of 3.5A at 25°C. The device boasts a low on-resistance (Rds On) of 100mOhm maximum at 3.5A and 10V Vgs, coupled with a logic level gate feature for enhanced compatibility with lower voltage control signals. Its maximum power dissipation is rated at 900mW. Key electrical parameters include a gate charge (Qg) of 30nC maximum at 10V and input capacitance (Ciss) of 525pF maximum at 10V. The NDS9958 is housed in a standard 8-SOIC (0.154", 3.90mm width) package and is supplied on tape and reel. This MOSFET array is commonly utilized in power management solutions for consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 525pF @ 10V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 3.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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