NDS9957
MOSFET 2N-CH 60V 2.6A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi NDS9957 is a dual N-channel MOSFET array featuring 60V drain-source voltage and 2.6A continuous drain current. This device is designed in an 8-SOIC package for surface mounting. The MOSFET array offers a low Rds(on) of 160mOhm at 2.6A and 10V, with a logic level gate feature. Key parameters include a maximum power dissipation of 900mW, gate charge of 12nC at 10V, and input capacitance of 200pF at 30V. The threshold voltage is specified at 3V maximum for 250µA. This component is typically utilized in power management and switching applications across various industries including consumer electronics and industrial automation. The NDS9957 is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 30V |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 2.6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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