NDS9955
MOSFET 2N-CH 50V 3A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NDS9955 is a dual N-channel MOSFET array designed for surface-mount applications. This component features a drain-to-source voltage (Vdss) of 50V and a continuous drain current (Id) of 3A. With a maximum power dissipation of 900mW, it is suitable for various power management and switching tasks. The MOSFET technology utilizes a logic-level gate for enhanced control, and the Rds On is specified at 130mOhm maximum at 3A and 10V. Key parameters include a gate charge (Qg) of 30nC maximum at 10V and input capacitance (Ciss) of 345pF maximum at 25V. The device comes in an 8-SOIC package, supplied on tape and reel. This component finds application in automotive, industrial, and consumer electronics sectors requiring efficient power switching.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Input Capacitance (Ciss) (Max) @ Vds | 345pF @ 25V |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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