NDS9952A-F011
MOSFET N/P-CH 30V 2.9A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NDS9952A-F011 is a MOSFET array featuring complementary N-channel and P-channel devices. This component is designed for surface mounting within an 8-SOIC package. It offers a continuous drain current capability of 2.9A at 25°C with a Drain-to-Source Voltage (Vdss) of 30V. The Rds On is specified at 80mOhm maximum at 1A, 10V. Key electrical characteristics include input capacitance (Ciss) up to 320pF at 10V and gate charge (Qg) up to 27nC at 10V for the N-channel device and 5nC at 10V for the P-channel device. Thermal dissipation is rated at 900mW (Ta). The operating temperature range is -55°C to 150°C (TJ). This device is commonly utilized in automotive and industrial applications requiring efficient power switching. The NDS9952A-F011 is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 320pF @ 10V |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V, 5nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | 8-SOIC |