NDS9942
MOSFET N/P-CH 20V 3A/2.5A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NDS9942 is a MOSFET array featuring complementary N-channel and P-channel transistors in a single 8-SOIC package. This device provides a 20V drain-to-source voltage rating with continuous drain currents of 3A for the N-channel and 2.5A for the P-channel, both specified at 25°C. With a maximum power dissipation of 900mW, it is suitable for surface mounting applications. Key electrical characteristics include a typical gate charge (Qg) of 27nC at 10V and input capacitance (Ciss) of 525pF at 10V. The NDS9942 is designed with logic level gate functionality, offering an Rds On of 125mOhm maximum at 1A, 10V. This component finds application in power management circuits and battery operated devices across various electronic industries. The part is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3A, 2.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 525pF @ 10V |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-SOIC |
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