NDS9933A
MOSFET 2P-CH 20V 2.8A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NDS9933A is a dual P-channel MOSFET designed for high-efficiency switching applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain current (Id) of 2.8A at 25°C. With a low Rds On of 140mOhm maximum at 2.8A and 4.5V Vgs, it minimizes conduction losses. The NDS9933A incorporates a logic-level gate for compatibility with lower voltage control signals. Its low Gate Charge (Qg) of 8.5nC maximum at 4.5V and Input Capacitance (Ciss) of 405pF maximum at 10V contribute to fast switching speeds. This MOSFET array is presented in an 8-SOIC (0.154", 3.90mm width) package, suitable for surface mounting. The maximum power dissipation is 900mW, and it operates across an extended temperature range of -55°C to 150°C (TJ). The NDS9933A is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 405pF @ 10V |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 2.8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
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