NDS9933
MOSFET 2P-CH 20V 3.2A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NDS9933 is a dual P-channel MOSFET array designed for efficient power management applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 3.2A at 25°C. With a maximum power dissipation of 900mW and a low Rds On of 110mOhm at 3.2A and 4.5V Vgs, it ensures optimal performance. The logic level gate enhancement simplifies driving requirements, and the 20nC gate charge at 4.5V indicates fast switching capabilities. Housed in an 8-SOIC package suitable for surface mounting, the NDS9933 is commonly utilized in consumer electronics and industrial automation systems. Its 870pF input capacitance at 10V Vds is a key parameter for circuit design.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 870pF @ 10V |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 3.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
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