NDS8958
MOSFET N/P-CH 30V 5.3A/4A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NDS8958 is a MOSFET array featuring complementary N-channel and P-channel transistors in a single 8-SOIC package. This device offers a Drain-Source Voltage (Vdss) of 30V, with continuous drain currents up to 5.3A for the N-channel and 4A for the P-channel at 25°C. The MOSFETs are designed with a logic level gate, and exhibit a low Rds(On) of 35mOhm maximum at 5.3A and 10V Vgs. Key parameters include a typical gate charge of 30nC and input capacitance of 720pF. Rated for 900mW power dissipation, the NDS8958 operates across a wide temperature range of -55°C to 150°C. This component is suitable for applications in power management and switching circuits across various industrial and consumer electronics sectors. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A, 4A |
| Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 15V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 5.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | 8-SOIC |
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