NDS8926
MOSFET 2N-CH 20V 5.5A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi NDS8926, a dual N-channel MOSFET array in an 8-SOIC package, offers a 20V drain-source voltage (Vdss) and 5.5A continuous drain current (Id) at 25°C. This device features logic-level gate operation with a threshold voltage (Vgs(th)) of 1V at 250µA. The on-resistance (Rds On) is a maximum of 35mOhm at 5.5A and 4.5V. Key parameters include a maximum gate charge (Qg) of 30nC at 4.5V and maximum input capacitance (Ciss) of 760pF at 10V. The component's power dissipation is rated at 900mW. The NDS8926 is suitable for applications in consumer electronics, industrial automation, and power management systems requiring efficient switching. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 10V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 5.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
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