NDS8852H
MOSFET N/P-CH 30V 4.3A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NDS8852H is a MOSFET array featuring complementary N-channel and P-channel transistors within an 8-SOIC package. This device offers a continuous drain current of 4.3A for the N-channel and 3.4A for the P-channel at 25°C, with a drain-to-source voltage rating of 30V. Optimized for surface mount applications, it boasts a maximum power dissipation of 1W. Key electrical characteristics include a typical gate charge (Qg) of 25nC at 10V and input capacitance (Ciss) of 300pF at 15V. The NDS8852H is suitable for power management and switching applications across industries such as consumer electronics, industrial automation, and automotive systems. Its logic level gate feature enhances compatibility with lower voltage control signals.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A, 3.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 15V |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 3.4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | 8-SOIC |
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