MVDF2C03HDR2G
MOSFET N/P-CH 30V 4.1A/3A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi MVDF2C03HDR2G is a complementary N- and P-Channel MOSFET array with a drain-to-source voltage (Vdss) of 30V. This device offers continuous drain current capabilities of 4.1A for the N-channel and 3A for the P-channel at 25°C. Engineered with a logic-level gate feature, it presents a maximum on-resistance (Rds On) of 70mOhm at 3A and 10V. The array is housed in an 8-SOIC package with a width of 3.90mm, suitable for surface mounting. Key electrical parameters include a maximum gate charge (Qg) of 16nC at 10V and input capacitance (Ciss) of 630pF at 24V. This component is designed for applications requiring efficient switching and power management, commonly found in consumer electronics and industrial automation. It operates within a temperature range of -55°C to 150°C (TJ) and supports a maximum power dissipation of 2W. The device is supplied on a Tape & Reel (TR).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel Complementary |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.1A, 3A |
| Input Capacitance (Ciss) (Max) @ Vds | 630pF @ 24V |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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