MMDF3N04HDR2
MOSFET 2N-CH 40V 3.4A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi MMDF3N04HDR2 is a dual N-channel MOSFET array designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 40V and a continuous Drain Current (Id) of 3.4A at 25°C. The device offers a low Rds On of 80mOhm maximum at 3.4A and 10V Vgs, with a Logic Level Gate feature for enhanced drive flexibility. Key electrical parameters include a Gate Charge (Qg) of 28nC maximum at 10V and an Input Capacitance (Ciss) of 900pF maximum at 32V. The MMDF3N04HDR2 is housed in a surface-mount 8-SOIC package, with a maximum power dissipation of 1.39W. This MOSFET array is suitable for use in automotive and industrial power management systems. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.39W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 32V |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 3.4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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