MMDF2P02ER2
MOSFET PWR P-CH 25V 2.5A 8-SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi MMDF2P02ER2 is a dual P-channel MOSFET array designed for demanding power switching applications. Featuring a 25V drain-to-source voltage and a continuous drain current rating of 2.5A at 25°C, this component offers a maximum power dissipation of 2W. Its low on-resistance of 250mOhm at 2A, 10V ensures efficient power transfer. The device utilizes a logic level gate for enhanced drive flexibility. Key electrical characteristics include an input capacitance (Ciss) of 475pF at 16V and a gate charge (Qg) of 15nC at 10V. Packaged in a surface-mount 8-SOIC (0.154", 3.90mm width) configuration, the MMDF2P02ER2 is suitable for high-density board designs in automotive and industrial automation systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 475pF @ 16V |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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