MMDF2N02ER2G
MOSFET 2N-CH 25V 3.6A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi MMDF2N02ER2G is a dual N-channel MOSFET array designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 25V and a continuous drain current (Id) of 3.6A at 25°C. The 8-SOIC package facilitates surface mounting and offers a maximum power dissipation of 2W. Key electrical characteristics include a low Rds(On) of 100mOhm at 2.2A and 10V, and a logic-level gate drive with a Vgs(th) of 3V at 250µA. The device exhibits a gate charge (Qg) of 30nC maximum at 10V and input capacitance (Ciss) of 532pF maximum at 16V. Operating temperature range is -55°C to 150°C. This MOSFET array is commonly utilized in automotive and industrial power management systems. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 532pF @ 16V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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