MMDF2N02ER2
MOSFET 2N-CH 25V 3.6A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi MMDF2N02ER2 is a 2 N-channel MOSFET array featuring a 25V drain-source voltage and a continuous drain current of 3.6A at 25°C. This device utilizes Metal Oxide technology and is presented in a surface-mount 8-SOIC package, supplied on tape and reel. Key electrical specifications include a maximum power dissipation of 2W, a gate charge of 30nC (max) at 10V, and input capacitance of 532pF (max) at 16V. The Rds On is 100mOhm maximum at 2.2A and 10V, with a logic level gate feature. The operating temperature range is -55°C to 150°C. This component is suitable for applications in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 532pF @ 16V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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