MMDF2C03HDR2
MOSFET N/P-CH 30V 4.1A/3A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi MMDF2C03HDR2 is a dual MOSFET array featuring N-channel and P-channel transistors in a single 8-SOIC package. This component is designed for high-efficiency operation with a continuous drain current of 4.1A for the N-channel and 3A for the P-channel, both specified at 25°C. The drain-to-source voltage rating is 30V, and it supports logic-level gate drive. Key electrical characteristics include a maximum Rds On of 70mOhm at 3A and 10V, a gate charge of 16nC (max) at 10V, and an input capacitance of 630pF (max) at 24V. The device has a maximum power dissipation of 2W and operates across a wide temperature range of -55°C to 150°C (TJ). The MMDF2C03HDR2 is commonly utilized in power management applications within the automotive and industrial sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.1A, 3A |
| Input Capacitance (Ciss) (Max) @ Vds | 630pF @ 24V |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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