MMDF1N05ER2G
MOSFET 2N-CH 50V 2A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi MMDF1N05ER2G is a dual N-channel MOSFET array designed for power management applications, particularly in low-voltage switching and control circuits. This component features a Drain-Source Voltage (Vdss) of 50V and a continuous Drain Current (Id) of 2A at 25°C. The device offers a low On-Resistance (Rds On) of 300mOhm maximum at 1.5A and 10V Vgs, contributing to efficient power transfer. Key characteristics include a Logic Level Gate for simplified drive requirements and a Gate Charge (Qg) of 12.5nC maximum at 10V. The MMDF1N05ER2G is housed in an 8-SOIC package, suitable for surface mounting and can dissipate up to 2W of power. It operates across a wide temperature range from -55°C to 150°C. This MOSFET array finds application in consumer electronics, industrial control, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25°C | 2A |
| Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 25V |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 1.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12.5nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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