MMDF1N05ER2
MOSFET 2N-CH 50V 2A 8-SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi MMDF1N05ER2 is a dual N-channel MOSFET array designed for power switching applications. This component features a Drain to Source Voltage (Vdss) of 50V and a continuous drain current (Id) of 2A at 25°C. The MOSFETs are characterized by a logic level gate, with a Gate Charge (Qg) of 12.5nC (Max) at 10V and an Input Capacitance (Ciss) of 330pF (Max) at 25V. On-resistance (Rds On) is specified at 300mOhm maximum for an Id of 1.5A with a Vgs of 10V. The device dissipates a maximum power of 2W and is housed in an 8-SOIC package suitable for surface mounting. This array is commonly utilized in consumer electronics, industrial automation, and automotive control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25°C | 2A |
| Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 25V |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 1.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12.5nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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