MCH6663-TL-W
MOSFET N/P-CH 30V 1.8A SC88FLManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi MCH6663-TL-W is a MOSFET array featuring both N-channel and P-channel devices. This component offers a 30V drain-source voltage rating and supports continuous drain currents of 1.8A for the N-channel and 1.5A for the P-channel. Designed for surface mounting in the SC-88FL/MCPH6 package, it dissipates a maximum power of 800mW. Key specifications include a low gate charge of 2nC maximum at 10V and input capacitance of 88pF maximum at 10V. The device operates with a logic-level gate, requiring a 4V drive. On-resistance is rated at 188mOhm maximum for both channels at their respective continuous drain currents and 10V Vgs. This MOSFET array is suitable for applications in consumer electronics, industrial automation, and power management. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 800mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A, 1.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 88pF @ 10V |
| Rds On (Max) @ Id, Vgs | 188mOhm @ 900mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2nC @ 10V |
| FET Feature | Logic Level Gate, 4V Drive |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | SC-88FL/MCPH6 |
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