MCH6663-TL-H
MOSFET N/P-CH 30V 1.8A 6MCPHManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi's MCH6663-TL-H is a MOSFET array featuring both N-channel and P-channel transistors, designed for efficient power management in demanding applications. This component offers a drain-source voltage (Vdss) of 30V, with continuous drain current capabilities of 1.8A for the N-channel and 1.5A for the P-channel device. The array boasts a low Rds On of 188mOhm at 900mA and 10V, coupled with a logic-level gate feature for enhanced drive flexibility. With a maximum power dissipation of 800mW and operating temperatures from -55°C to 150°C, it is suitable for automotive and industrial electronics. The MCH6663-TL-H is supplied in a compact 6-MCPH package, suitable for surface mounting and delivered on tape and reel. Key electrical characteristics include input capacitance (Ciss) of 88pF and gate charge (Qg) of 2nC.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 800mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A, 1.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 88pF @ 10V |
| Rds On (Max) @ Id, Vgs | 188mOhm @ 900mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 6-MCPH |
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