MCH6661-TL-W
MOSFET 2N-CH 30V 1.8A SC88FLManufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The onsemi MCH6661-TL-W is a dual N-channel MOSFET array designed for electronic applications requiring efficient switching. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 1.8A at 25°C. With a maximum power dissipation of 800mW and a low on-resistance (Rds On) of 188mOhm at 900mA and 10V, it is suitable for power management tasks. The MOSFET array utilizes Metal Oxide technology and operates with a logic level gate, requiring a 4V drive. Key parameters include a gate charge (Qg) of 2nC at 10V and an input capacitance (Ciss) of 88pF at 10V. The device is packaged in an SC-88FL/MCPH6 (6-TSSOP, SC-88, SOT-363) and supplied on tape and reel. It operates within a temperature range of -55°C to 150°C (TJ). This component is commonly found in industrial, automotive, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 800mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 88pF @ 10V |
| Rds On (Max) @ Id, Vgs | 188mOhm @ 900mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2nC @ 10V |
| FET Feature | Logic Level Gate, 4V Drive |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | SC-88FL/MCPH6 |
Request a Quote
Clients Also Buy
NVLJD4007NZTBG
MOSFET 2N-CH 30V 0.245A 6WDFN
FDMD8530
MOSFET 2N-CH 30V 35A POWER56
NVXR17S90M2SPB
SIC 900V 8D MOSFET V-SSDC SPB
