MCH6660-TL-W
MOSFET N/P-CH 20V 2A/1.5A 6MCPHManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi MCH6660-TL-W is a MOSFET array featuring N-channel and P-channel configurations. This component is designed for surface mounting within a 6-MCPH package, supplied on tape and reel. It offers a Drain-to-Source Voltage (Vdss) of 20V, with continuous drain current capabilities of 2A for the N-channel and 1.5A for the P-channel. The device operates with a logic-level gate, supporting 1.8V drive, and exhibits a maximum Rds On of 136mOhm at 1A and 4.5V. Key parameters include a maximum power dissipation of 800mW and an operating temperature up to 150°C. Applications for this MOSFET array can be found in consumer electronics and industrial systems requiring efficient power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 800mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2A, 1.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 128pF @ 10V |
| Rds On (Max) @ Id, Vgs | 136mOhm @ 1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.8nC @ 4.5V |
| FET Feature | Logic Level Gate, 1.8V Drive |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Supplier Device Package | 6-MCPH |
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