MCH6626-TL-E
MOSFET N/P-CH 20V 1.6A 6MCPHManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi MCH6626-TL-E is a MOSFET array featuring N-channel and P-channel configurations. This component offers a 20V drain-to-source voltage (Vdss) with a continuous drain current (Id) of 1.6A for the N-channel and 1A for the P-channel, both specified at 25°C. It utilizes a logic level gate feature, with a typical gate charge (Qg) of 1.4nC at 4V and input capacitance (Ciss) of 105pF at 10V. The device has a maximum power dissipation of 800mW and an on-resistance (Rds On) of 230mOhm at 800mA and 4V. Supplied in a 6-pin MCPH package, it is designed for surface mounting and operates at temperatures up to 150°C. This MOSFET array is suitable for applications in consumer electronics and power management.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 800mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A, 1A |
| Input Capacitance (Ciss) (Max) @ Vds | 105pF @ 10V |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 800mA, 4V |
| Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 4V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 6-MCPH |