MCH6613-TL-E
MOSFET N/P-CH 30V 0.35A 6MCPHManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi MCH6613-TL-E is a MOSFET array featuring N and P-channel configurations within a 6-MCPH package for surface mounting. This device offers a drain-source voltage (Vdss) of 30V with continuous drain currents of 350mA for the N-channel and 200mA for the P-channel at 25°C. The MOSFET array operates with a maximum power dissipation of 800mW and features logic-level gate functionality. Key electrical parameters include a maximum Rds On of 3.7 Ohms at 80mA and 4V for the N-channel, a maximum gate charge (Qg) of 1.58nC at 10V, and a maximum input capacitance (Ciss) of 7pF at 10V. The operating temperature range extends to 150°C (TJ). This component is commonly utilized in applications for power management and general-purpose switching. The MCH6613-TL-E is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 800mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 350mA, 200mA |
| Input Capacitance (Ciss) (Max) @ Vds | 7pF @ 10V |
| Rds On (Max) @ Id, Vgs | 3.7Ohm @ 80mA, 4V |
| Gate Charge (Qg) (Max) @ Vgs | 1.58nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 6-MCPH |