MCH6605-TL-E
MOSFET 2P-CH 50V 0.14A 6MCPHManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi MCH6605-TL-E is a dual P-channel MOSFET array offering a 50V drain-source breakdown voltage and a continuous drain current of 140mA at 25°C. This device features logic-level gate drive capability, requiring only 4V for operation. With a maximum power dissipation of 800mW and a low Rds(on) of 22 Ohms at 40mA and 10V, it is suitable for power management and switching applications. Key parameters include a gate charge of 1.32nC and input capacitance of 6.2pF, both measured at 10V. The MCH6605-TL-E utilizes MOSFET technology and is supplied in a 6-MCPH package for surface mounting, delivered on tape and reel. This component is commonly found in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 800mW |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25°C | 140mA |
| Input Capacitance (Ciss) (Max) @ Vds | 6.2pF @ 10V |
| Rds On (Max) @ Id, Vgs | 22Ohm @ 40mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 1.32nC @ 10V |
| FET Feature | Logic Level Gate, 4V Drive |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 6-MCPH |
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