MCH6604-TL-E
MOSFET 2N-CH 50V 0.25A 6MCPHManufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
onsemi MCH6604-TL-E is a 2-N-Channel MOSFET array designed for surface mount applications. This component offers a Drain-to-Source Voltage (Vdss) of 50V and a continuous drain current (Id) of 250mA at 25°C. Featuring a logic-level gate, it is suitable for applications requiring low voltage drive. The device exhibits a maximum Rds On of 7.8 Ohms at 50mA and 4V, with a maximum power dissipation of 800mW. Key electrical characteristics include a maximum gate charge (Qg) of 1.57nC and input capacitance (Ciss) of 6.6pF, both specified at 10V. The MCH6604-TL-E operates within an extended temperature range of 150°C (TJ) and is supplied in a 6-MCPH package, delivered on tape and reel. This MOSFET array finds application in automotive and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 800mW |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25°C | 250mA |
| Input Capacitance (Ciss) (Max) @ Vds | 6.6pF @ 10V |
| Rds On (Max) @ Id, Vgs | 7.8Ohm @ 50mA, 4V |
| Gate Charge (Qg) (Max) @ Vgs | 1.57nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 6-MCPH |
Request a Quote
Clients Also Buy
NVLJD4007NZTBG
MOSFET 2N-CH 30V 0.245A 6WDFN
NTGD4161PT1G
MOSFET 2P-CH 30V 1.5A 6TSOP
NTMFD1D6N03P8
MOSFET 2N-CH 30V 17A/56A 8PQFN
