MCH6603-TL-H
MOSFET 2P-CH 50V 0.14A 6MCPHManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi MCH6603-TL-H is a 2 P-Channel MOSFET array designed for surface mounting. This component features a drain-to-source voltage (Vdss) of 50V and a continuous drain current (Id) of 140mA at 25°C. The MOSFETs offer a logic-level gate, operable with a 1.5V drive, and have a maximum power dissipation of 800mW. Specified parameters include a gate charge (Qg) of 1.4nC and input capacitance (Ciss) of 7.4pF, both measured at 10V. The on-resistance (Rds On) is a maximum of 23 Ohms at 40mA and 4V. This device operates within a temperature range of 150°C (TJ) and is supplied in a 6-MCPH package on tape and reel. Applications for this MOSFET array include consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 800mW |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25°C | 140mA |
| Input Capacitance (Ciss) (Max) @ Vds | 7.4pF @ 10V |
| Rds On (Max) @ Id, Vgs | 23Ohm @ 40mA, 4V |
| Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 10V |
| FET Feature | Logic Level Gate, 1.5V Drive |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 6-MCPH |
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