MCH6602-TL-E
MOSFET 2N-CH 30V 0.35A 6MCPHManufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
onsemi MCH6602-TL-E is a dual N-channel MOSFET array designed for efficient power switching. This 30V device features a continuous drain current capability of 350mA and a maximum power dissipation of 800mW. The MOSFET array utilizes a logic level gate for enhanced compatibility with low-voltage control signals. Key electrical characteristics include a Drain-Source On-Resistance (Rds On) of 3.7 Ohms at 80mA and 4V, an input capacitance (Ciss) of 7pF at 10V, and a gate charge (Qg) of 1.58nC at 10V. The MCH6602-TL-E is provided in a 6-MCPH surface mount package, supplied on tape and reel. This component is commonly found in applications within the consumer electronics and industrial automation sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 800mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 350mA |
| Input Capacitance (Ciss) (Max) @ Vds | 7pF @ 10V |
| Rds On (Max) @ Id, Vgs | 3.7Ohm @ 80mA, 4V |
| Gate Charge (Qg) (Max) @ Vgs | 1.58nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 6-MCPH |
Request a Quote
Clients Also Buy
NVMFD5C446NWFT1G
MOSFET 2N-CH 40V 24A/127A 8DFN
NVLJD4007NZTBG
MOSFET 2N-CH 30V 0.245A 6WDFN
NVMJD5D4N04CTWG
MOSFET N-CH 40V LFPAK56
