MCH6601-TL-E
MOSFET 2P-CH 30V 0.2A 6MCPHManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi MCH6601-TL-E is a MOSFET array featuring two P-channel transistors, each rated for a 30V drain-source voltage and capable of continuous drain current up to 200mA. This device utilizes Metal Oxide Semiconductor Field-Effect Transistor technology and is packaged in a 6-MCPH surface-mount configuration. Key electrical characteristics include a maximum power dissipation of 800mW, an Rds On of 10.4 Ohms at 50mA and 4V, and a gate charge of 1.43nC at 10V. Input capacitance (Ciss) is a maximum of 7.5pF at 10V. The MCH6601-TL-E is suitable for applications requiring low-level gate voltage operation and is supplied in tape and reel packaging. This component finds utility in various electronic systems, including power management and signal switching applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 800mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 200mA |
| Input Capacitance (Ciss) (Max) @ Vds | 7.5pF @ 10V |
| Rds On (Max) @ Id, Vgs | 10.4Ohm @ 50mA, 4V |
| Gate Charge (Qg) (Max) @ Vgs | 1.43nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 6-MCPH |