HUFA76504DK8T
MOSFET 2N-CH 80V 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi UltraFET™ HUFA76504DK8T is a dual N-channel MOSFET array designed for demanding applications. This component features a Drain to Source Voltage (Vdss) of 80V and a maximum continuous drain current capability. With a low Rds On of 200mOhm at 2.5A and 10V, it offers efficient power switching. The logic level gate enhances compatibility with lower voltage control signals. The device boasts a gate charge (Qg) of 10nC at 10V and an input capacitance (Ciss) of 270pF at 25V. Packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, it is supplied on tape and reel. The maximum power dissipation is 2.5W, and it operates within a temperature range of -55°C to 150°C. This MOSFET array finds application in power management, automotive systems, and industrial control.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.5W |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 25V |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 2.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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