HUFA76413DK8T-F085P
MOSFET 2N-CH 60V 5.1A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi HUFA76413DK8T-F085P is a dual N-channel MOSFET array designed for automotive applications, qualified to AEC-Q101 standards. This component features a 60V drain-source voltage rating and supports a continuous drain current of 5.1A at 25°C (Tc). Optimized for surface mounting, it is housed in an 8-SOIC package and utilizes MOSFET technology. Key electrical characteristics include a maximum Rds On of 49mOhm at 5.1A and 10V, a gate charge (Qg) of 23nC at 10V, and input capacitance (Ciss) of 620pF at 25V. The device operates efficiently with a logic level gate and has a maximum power dissipation of 2.5W (Ta). This MOSFET array is suitable for power management and switching applications within the automotive sector.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.5W (Ta) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 620pF @ 25V |
| Rds On (Max) @ Id, Vgs | 49mOhm @ 5.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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