HUFA76413DK8T-F085
MOSFET 2N-CH 60V 5.1A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi UltraFET™ HUFA76413DK8T-F085 is a dual N-channel MOSFET array designed for demanding applications. With a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 5.1A at 25°C, this AEC-Q101 qualified component offers robust performance. The MOSFETs feature a Logic Level Gate and a low Rds(On) of 49mOhm at 5.1A, 10V. The device is supplied in an 8-SOIC package, suitable for surface mounting, and is delivered on Tape & Reel. Key parameters include a maximum power dissipation of 2.5W and an operating temperature range of -55°C to 150°C. This component is commonly utilized in automotive systems.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.5W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 5.1A |
| Input Capacitance (Ciss) (Max) @ Vds | 620pF @ 25V |
| Rds On (Max) @ Id, Vgs | 49mOhm @ 5.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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