HUFA76407DK8TF085P
MOSFET 2N-CH 60V 3.8A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi UltraFET™ HUFA76407DK8TF085P is a dual N-channel MOSFET array designed for surface mounting in an 8-SOIC package. This component features a 60V drain-to-source voltage and a continuous drain current of 3.8A at 25°C. With a maximum power dissipation of 2.5W and a typical Rds(On) of 90mOhm at 3.8A and 10V, it is suitable for applications requiring efficient switching. The device operates within a temperature range of -55°C to 150°C. Key parameters include an input capacitance of 330pF at 25V and a gate threshold voltage of 3V at 250µA. The HUFA76407DK8TF085P is commonly employed in power management, automotive, and industrial control systems. It is supplied on tape and reel for automated assembly.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.5W (Ta) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 25V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 3.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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