HUFA76404DK8T
MOSFET 2N-CH 62V 3.6A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi HUFA76404DK8T is a dual N-channel MOSFET array designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 62V and a continuous drain current (Id) of 3.6A at 25°C. The MOSFET array boasts a low on-resistance (Rds On) of 110mOhm maximum at 3.6A and 10V, contributing to reduced power loss. With a logic level gate feature and a gate charge (Qg) of 4.9nC maximum at 5V, it facilitates direct control from lower voltage microcontrollers. The device is housed in an 8-SOIC (0.154", 3.90mm Width) package, suitable for surface mounting. Typical applications include power management, motor control, and battery charging systems across industrial and automotive sectors. Operating temperature range is -55°C to 150°C (TJ). The HUFA76404DK8T is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.5W |
| Drain to Source Voltage (Vdss) | 62V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 25V |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 3.6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4.9nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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