HUF76407DK8T
MOSFET 2N-CH 60V 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
onsemi's UltraFET™ HUF76407DK8T is a 2 N-channel MOSFET array featuring a 60V drain-to-source voltage (Vdss) and 2.5W maximum power dissipation. This component is housed in an 8-SOIC package with surface mount mounting type and is supplied on tape and reel. Key electrical characteristics include a maximum on-resistance (Rds On) of 90mOhm at 3.8A and 10V, a gate charge (Qg) of 11.2nC at 10V, and an input capacitance (Ciss) of 330pF at 25V. The device operates with a logic level gate and a threshold voltage (Vgs(th)) of 3V at 250µA. The HUF76407DK8T is suitable for applications in automotive, industrial, and power management systems.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.5W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 25V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 3.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11.2nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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