FW907-TL-E
MOSFET N/P-CH 30V 10A/8A 8SOPManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FW907-TL-E is a MOSFET array featuring both N-channel and P-channel transistors, designed for high-efficiency switching applications. This component offers a drain-source voltage (Vdss) of 30V, with continuous drain current capabilities of 10A for the N-channel and 8A for the P-channel at 25°C. Engineered with logic-level gate drive, it facilitates operation with lower voltage control signals. The device boasts a low on-resistance (Rds On) of 17mOhm at 10A and 10V Vgs, along with a maximum power dissipation of 2.5W. Key electrical parameters include a maximum gate charge (Qg) of 17nC at 10V and input capacitance (Ciss) of 1000pF at 10V. The FW907-TL-E is supplied in an 8-SOP (8-SOIC) package for surface mounting and operates across a temperature range of -55°C to 150°C (TJ). This component finds application in power management, automotive systems, and industrial control. It is provided in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.5W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 10A, 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 10V |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-SOP |
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