FW811-TL-E
MOSFET 2N-CH 35V 8A 8SOPManufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
onsemi FW811-TL-E is a dual N-channel MOSFET array designed for power management applications. This component features a 35V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 8A at 25°C. The logic-level gate enables operation with lower gate drive voltages. Key electrical characteristics include a maximum on-resistance (Rds On) of 24mOhm at 8A and 10V, and a gate charge (Qg) of 13nC maximum at 10V. Input capacitance (Ciss) is 660pF maximum at 20V. The device is housed in an 8-SOP package, suitable for surface mounting, with a maximum power dissipation of 2.2W. Operating temperature range extends to 150°C. This MOSFET array finds use in sectors such as automotive and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.2W |
| Drain to Source Voltage (Vdss) | 35V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 20V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | 8-SOP |
Request a Quote
Clients Also Buy
NVMFD5C446NWFT1G
MOSFET 2N-CH 40V 24A/127A 8DFN
NVLJD4007NZTBG
MOSFET 2N-CH 30V 0.245A 6WDFN
NVMJD5D4N04CTWG
MOSFET N-CH 40V LFPAK56
