FW389-TL-2W
MOSFET N/P-CH 100V 2A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi MOSFET Array, FW389-TL-2W, offers a robust solution for power management applications. This component features dual N-channel and P-channel MOSFETs, each rated for 100V Vdss and a continuous drain current of 2A at 25°C. The device boasts a low Rds(On) of 225mOhm maximum at 2A, 10V, and operates with a logic-level gate requiring a 4V drive. With a maximum power dissipation of 1.8W, it is suitable for surface mount assembly in an 8-SOIC package, supplied on tape and reel. Key electrical parameters include a gate charge of 10nC maximum at 10V and input capacitance of 490pF maximum at 10V. The operating temperature range extends to 150°C (TJ). This MOSFET array finds utility in various power control systems within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.8W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 2A |
| Input Capacitance (Ciss) (Max) @ Vds | 490pF @ 10V |
| Rds On (Max) @ Id, Vgs | 225mOhm @ 2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| FET Feature | Logic Level Gate, 4V Drive |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-SOIC |
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