FW344A-TL-2W
MOSFET N/P-CH 30V 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FW344A-TL-2W is a MOSFET array featuring both N-channel and P-channel transistors. With a Drain-to-Source Voltage (Vdss) of 30V, it provides continuous drain currents of 4.5A for the N-channel and 3.5A for the P-channel at 25°C. This device is designed for logic-level gate drive applications, requiring a 4V gate voltage. Key electrical parameters include a maximum Gate Charge (Qg) of 5.6nC at 10V and a maximum Input Capacitance (Ciss) of 280pF at 10V. The on-resistance (Rds On) is specified as a maximum of 64mOhm at 4.5A and 10V. The FW344A-TL-2W is housed in an 8-SOIC package suitable for surface mounting and operates at junction temperatures up to 150°C. Its power dissipation is rated at 1.7W. This component is commonly utilized in automotive and industrial power management applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.7W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A, 3.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 10V |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 4.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 5.6nC @ 10V |
| FET Feature | Logic Level Gate, 4V Drive |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-SOIC |
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