FW297-TL-2W
MOSFET 2N-CH 60V 4.5A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi FW297-TL-2W is a dual N-channel MOSFET array designed for demanding applications. This component offers a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4.5A at 25°C. Featuring a logic-level gate requiring only 4V for activation, it boasts a low Rds On of 58mOhm maximum at 4.5A and 10V Vgs. Key parameters include a gate charge (Qg) of 14nC maximum at 10V and an input capacitance (Ciss) of 750pF maximum at 20V. The device is packaged in an 8-SOIC (0.154", 3.90mm width) format, suitable for surface mounting and supplied on tape and reel (TR). With a maximum power dissipation of 1.8W and an operating junction temperature of 150°C, this MOSFET array is commonly utilized in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.8W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 20V |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 4.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| FET Feature | Logic Level Gate, 4V Drive |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | 8-SOIC |
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