FW216A-TL-2W
MOSFET 2N-CH 35V 4.5A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi FW216A-TL-2W is a dual N-channel MOSFET array featuring 35V drain-source voltage and 4.5A continuous drain current. This device is optimized for logic-level gate drive with a 4V requirement. Key parameters include a maximum on-resistance of 64mOhm at 4.5A and 10V Vgs, input capacitance of 280pF, and gate charge of 5.6nC. The MOSFET array dissipates up to 2.2W and operates reliably at junction temperatures up to 150°C. It is housed in an 8-SOIC package for surface mounting and supplied on tape and reel. This component is suitable for applications in power management and general-purpose switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.2W |
| Drain to Source Voltage (Vdss) | 35V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 10V |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 4.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 5.6nC @ 10V |
| FET Feature | Logic Level Gate, 4V Drive |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-SOIC |
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