FQS4903TF
MOSFET 2N-CH 500V 0.37A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi QFET® FQS4903TF is a dual N-channel MOSFET array designed for high-voltage applications. This device features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 370mA at 25°C. The FQS4903TF is supplied in an 8-SOIC package for surface mounting, offering a maximum power dissipation of 2W. Key electrical characteristics include a gate charge (Qg) of 8.2nC (typical) and input capacitance (Ciss) of 200pF (typical) at specified voltages. The on-resistance (Rds On) is 6.2 Ohms maximum at 185mA and 10V. This component is suitable for use in power supply, lighting, and industrial control applications. It operates within a temperature range of -55°C to 150°C. The device is packaged on a Tape & Reel.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 370mA |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 25V |
| Rds On (Max) @ Id, Vgs | 6.2Ohm @ 185mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SOIC |
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